Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

• Thin film multi-layer capacitors using high-dielectric constant Bi2Mg2/3Nb4/3O7 thin films.
• The multi-layer capacitors using inner and outer Cu electrodes.
• Bi-layer capacitors having two times capacitance as high as those of the single-layer.
• Bi2Mg2/3Nb4/3O7 thin films are suitable for thin film multi-layer capacitor applications.

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi2Mg2/3Nb4/3O7 thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi2Mg2/3Nb4/3O7 thin-films would be suitable for thin-film multi-layer capacitor applications.