Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

• The effect of negative electric field on spin-dependent tunneling is theoretically investigated.
• The well-known transfer matrix approach is used.
• The separation between spin-up and spin-down components are evaluated.
• There is a linear variation of spin separation and tunneling life time is observed.
• Higher the magnitude of negative electric field increases tunneling life time.

The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.