Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells

• We investigated how resistivities affect the solar cell performance as a function of BSF quality.
• With numerical calculation, we found, the bulk lifetime is high, the values of BSF saturation current are more sensitive to Job because of low bulk saturation current.
• This Numerical analysis showed that Job and Voc depend on wafer resistivity in the case of a low diffusion length.
• However, with increasing diffusion lengths in the wafer bulk, the cell performance did not depend on wafer resistivity.
• In case of cell performance which we made, as increasing diffusion lengths in wafer bulk, the cell performance were not depending on wafer resistivity.

The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality.