Printed non-volatile resistive switches based on zinc stannate (ZnSnO3)

• We propose zinc stannate (ZnSnO3) material for the active layer of memristor.
• The device consists of three layers (ITO/ZnSnO3/Ag).
• We have fabricated the device with electro-hydrodynamic (EHD) technique.
• The device shows stable resistive switching behavior between HRS and LRS.
• Endurance test is carried out for both mechanical and electrical properties.

We present all printed non-volatile resistive switches based on zinc stannate (ZnSnO3) for the memory applications. The device is fabricated on a flexible poly(ethyleneterephthalate) (PET) substrate through electrohydrodynamic (EHD) technique, where active layer of ZnSnO3 (∼130 nm) is deposited on the indium tin oxide (ITO) coated PET and a 100 μm silver line is deposited with thickness of 350 nm and length of 2 mm as a top electrode. The device exhibits resistive switching behavior at dual polarity voltage ±8 V. The measured value of high resistance state (HRS) and low resistance state (LRS) are 250 MΩ and 7.6 MΩ respectively. Nine (9) memristors are fabricated on a single substrate and their variability from device to device is measured to be 1 MΩ and 48 MΩ for LRS and HRS respectively. Furthermore, the device showed bendability down to 8 mm diameter and ON/OFF endurance for more than 200 cycles. Mechanical and surface morphology characterizations are carried out by using mechanical stress machine and field emission scanning electron microscopy (FE-SEM).