کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785638 1023388 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optimization and improvement of TIPS-pentacene transistors (OTFT) with UV-ozone and chemical treatments using an all-step solution process
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Optimization and improvement of TIPS-pentacene transistors (OTFT) with UV-ozone and chemical treatments using an all-step solution process
چکیده انگلیسی
We fabricated an organic thin-film transistor (OTFT) using an all-step solution process. The printed layers, in which the electrode (silver), dielectric layer (BaTiO3-PMMA), source-drain layer, and semiconductor 6,13-Bis(triisopropylsilylethynyl)pentacene(TIPS-pentacene), were optimized using roll-to-roll, an inkjet printer, and drop-casting. After coating the source-drain layer, we applied ultraviolet (UV)-ozone and self-assembled monolayer (SAM) treatments to the composite layer. The OTFTs treated with the UV-ozone and SAM treatments were found to exhibit excellent performance and good properties in comparison to silicon-based OTFTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 15, Issue 10, October 2015, Pages 1238-1244
نویسندگان
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