کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1785691 | 1023390 | 2015 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices Memory characteristics and tunneling mechanism of Pt nano-crystals embedded in HfAlOx films for nonvolatile flash memory devices](/preview/png/1785691.png)
چکیده انگلیسی
A non-volatile flash memory device based on metal oxide semiconductor (MOS) capacitor structure has been fabricated using platinum nano-crystals(Pt-NCs) as storage units embedded in HfAlOx high-k tunneling layers. Its memory characteristics and tunneling mechanism are characterized by capacitance-voltage(C-V) and flat-band voltage-time(ÎVFB-T) measurements. A 6.5 V flat-band voltage (memory window) corresponding to the stored charge density of 2.29 Ã 1013 cmâ2 and about 88% stored electron reserved after apply ±8 V program or erase voltage for 105 s at high frequency of 1 MHz was demonstrated. Investigation of leakage current-voltage(J-V) indicated that defects-enhanced Pool-Frenkel tunneling plays an important role in the tunneling mechanism for the storage charges. Hence, the Pt-NCs and HfAlOx based MOS structure has a promising application in non-volatile flash memory devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 15, Issue 3, March 2015, Pages 279-284
Journal: Current Applied Physics - Volume 15, Issue 3, March 2015, Pages 279-284
نویسندگان
Guangdong Zhou, Bo Wu, Zhiling Li, Zhijun Xiao, Shuhui Li, Ping Li,