Magnetic field-dependent ordinary Hall effect and thermopower of VO2 thin films

• We investigated the magnetic field-dependent Hall effect in VO2 thin films at various temperatures by using PPMS.
• The change in the sign of Hall voltage was observed near TC.
• Hall voltage and MR decrease with increasing magnetic field in semiconducting phase.
• The temperature-dependent thermopower of VO2 was performed.
• Nonlinear variation in thermoelectric voltage with increasing temperature gradient was observed.

We investigated the magnetic field-dependent Hall effect and the thermopower in VO2 thin films at various temperatures by using physical property measurement systems. From the ordinary Hall effect measured at 300–370 K, it was found that the Hall voltage decreased with increasing magnetic field, attributed to the weakening of strong electron correlation, and dominant charge carriers were changed implying the existence of mixed phases near the critical temperature of VO2. A gradual thermopower increase and its sign inversion with increasing temperature gradient were observed at 320–350 K, which seems to stem from percolation processes during the phase transition in VO2.