کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1785970 1023401 2013 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of hydrogen plasma treatment on SnO2:F substrates for amorphous Si thin film solar cells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Effects of hydrogen plasma treatment on SnO2:F substrates for amorphous Si thin film solar cells
چکیده انگلیسی

We investigated the effects of hydrogen plasma treatment on the physical and electrical properties of fluorine-doped tin oxide (FTO) films used for amorphous silicon (a-Si) thin film solar cells. A slight increase in carrier concentration by the hydrogen doping effect was observed for the FTO film exposed to the hydrogen plasma for 5 min. For further exposure to the plasma, the chemical reduction became prominent and resulted in deterioration of the electrical and optical properties of the film. XPS analysis revealed that the chemical reduction of SnO2 to Sn metallic state occurs on the surface region. It was found that the defects formed by hydrogen plasma act as recombination centers at the interface between FTO electrode and p-layer of a-Si solar cells. This phenomenon resulted in the deterioration of the cell performance. The averaged conversion efficiency (6.82%) of the cells on pristine FTO hydrogen substrate was decreased to 5.81% for the cells on FTO treated for 5 min, which is mainly attributed to the decrease in short-circuit current density.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 13, Issue 8, October 2013, Pages 1589–1593
نویسندگان
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