Temperature dependence of the lifetime of nonequilibrium charge carriers in GaP diodes under condition of recombination current domination

• The method of τ0 obtaining from U–T and C–U diode characteristics has been worked out.
• τ0(T) dependences of GaP diodes have been obtained up to T = 550 K for the first time.
• Plotted experimental dependencies confirm one-level deep centre recombination model.
• The nature of such a centre is fundamental and its depth makes EC −1.25 eV for GaP.
• Recombination processes appear to be similar in various wide bandgap based p-n diodes.

Temperature dependence of the lifetime of nonequilibrium charge carriers limited by recombination process in a p-n junction space-charge region has been obtained from current–voltage, capacitance–voltage and thermometric characteristics of GaP p+-n junctions in the temperature range 150–500 K. The results have been refined using the data of the junction relaxation characteristics. Parameters of the carriers' lifetime sensitivity to the temperature and current have been determined. It has been established that the charge carriers recombine predominantly through deep single-level amphoteric-type centres. The depth of the centres makes approx. (EC-1.25 eV). We suppose that the nature of the centres formation is not connected with the junction fabrication technology. It has rather fundamental origin. The results of the present investigation could be used in the development of devices based on wide bandgap semiconductors and particularly high temperature diode sensors.