کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786086 1023404 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exciton eigenstates and biexciton interaction energies in a spherical core/shell semiconductor hetero-nano structure
ترجمه فارسی عنوان
انرژی های متقابل ایزیتون و انرژی بیسکسیتون در ساختار نانو ساختار نیمه هادی کروی هسته / پوسته
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی


• We analyze exciton and biexciton energy in a spherical hetero-nano structure.
• We evaluate overlap integral, exciton binding energy, and bi-exciton interaction energy.
• The exciton and bi-exciton energy strongly depends on the choice of materials.

The exciton eigenstates and biexciton interaction energies in a spherical core–shell hetero-nano structure in the type II and the quasi-type II carrier localization regimes have been analyzed. For the analysis, we have evaluated the electron–hole overlap integral, the binding energy of exciton ground state, and the interaction energy of bi-exciton ground state in the structure. In the evaluation, the first order perturbation approach has been employed, where the direct Coulomb interaction energy, the surface polarization energy and the dielectric solvation energy are included. Our results show that the exciton eigenenergies and exciton–exciton interaction energy strongly depend on the choice of materials on which both the dielectric constants and the electron and hole effective masses rely.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 9, September 2014, Pages 1325–1330
نویسندگان
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