Effect of stacked dielectric with high dielectric constant and surface modification on current enhancement in pentacene thin-film transistors

► We identify the current enhancement feature resulting from both dielectric effects. ► A hybrid dielectric configuration is proposed using low-k SiO2 and high-k C-L PVA. ► Hydrophobic property is achieved even a strong hydroxyl-rich dielectric surface. ► Low-surface-energy results in the distinct increase of structural order of films.