Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors

• We suggest two types of spin-FETs which play roles of n and p-type transistors.
• Using spin-FETs, the complementary inverter operation is presented.
• A new fabrication method for exchange bias is developed for spin transistor.

Exchange biased Co84Fe16/Ir22Mn78 bilayers are designed for controlling the magnetization direction of ferromagnetic source and drain in the spin field effect transistor. Depending on the applied field direction during the sputtering, two different orientations of exchange bias fields, +35.5 mT and −36.3 mT are obtained. Using these Co84Fe16/Ir22Mn78 electrodes, two types of spin transistors, which have roles of n and p-type transistors in the conventional complementary scheme, are implemented. Using the parameters extracted from experimental data, the complementary inverter operation is also presented.