کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786234 1023410 2014 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Tuning of ripple patterns and wetting dynamics of Si (100) surface using ion beam irradiation
ترجمه فارسی عنوان
تنظیم الگوهای رطوبتی و پویایی خیس کردن سطح سی (100) با تابش پرتو یون
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی


• Surface patterning of Si (100) is investigated for 200 keV Ar ion beam.
• Surface etching of silicon under sputtering is studied using Stylus profilometer.
• Hydrophilic property of ripple patterned Si (100) is studied.

Ripple patterns on Si (100) surface have been fabricated using 200 keV Ar+ oblique ion beam irradiation. Dynamical evolution of patterns is studied for the fluences ranging from 3 × 1017 ions/cm2 to 3 × 1018 ions/cm2. AFM study reveals that the exponential growth of roughness with stable wavelength of ripples up to higher fluence values is lying in the linear regime of Continuum models. Stylus Profilometer measurement was carried out to emphasize the role of sputtering induced surface etching in ripple formation. Rutherford Backscattering Spectroscopy shows the incorporation of Ar in the near surface region. Observed growth of ripples is discussed in the framework of existing models of surface patterning. Role of ion beam sputtering induced surface etching is emphasized in formation of ripples. In addition, the wetting study is performed to demonstrate the possibility of engineering the hydrophilicity of ripple patterned Si (100) surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 3, March 2014, Pages 312–317
نویسندگان
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