Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature

• Au/PVC + TCNQ/p-Si structure are fabricated and characterized.
• Dielectric properties of the structure are presented.
• Dielectric parameters of structure are depending on frequency and voltage.

Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (ɛ′, ɛ″), loss tangent (tanδ), and the real and imaginary parts of the electric modulus (M′, M″) and ac conductivity (σac) of this structure have been investigated in wide frequency a range of 1 kHz–5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (Nss). The decrease in ɛ′ and ɛ″ with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M′ increase with increasing frequency and reach a maximum, M″ shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(σac) vs ln(ω) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(σac) vs ln(ω) plot indicated that there are three different conduction mechanisms in the Au/PVC + TCNQ/p-Si structure at room temperature.