Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structure

• Full zinc-blende structure GaAs nanowire grown by a catalyst-free method is reported with As pulse injection in the initial growth time.
• GaAs nanowire was investigated depending on the SiO2 layer etching status.
• GaAs nanowire growth was investigated while changing the Ga/As injection time ratio in the initial growth.
• Full zinc-blende GaAs nanowire structure is verified by TEM analysis.

Full zinc-blende structure GaAs nanowire grown by a catalyst-free method is reported with As pulse injection in the initial growth time. When As is injected by a pulse while maintaining Ga injection, high Ga supersaturation could easily form nanowire nucleation for the seed formation. Then, continuous GaAs injection contributes to GaAs nanowire growth for increasing length. The GaAs nanowire could grow further with 3.7-μm length and 120-nm diameter. GaAs nanowires were measured by transmission electron microscopy analysis.

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