Device characteristics and tight binding based modeling of bilayer graphene field-effect transistor

In this work the device characteristic of bilayer graphene MOSFET is investigated by calculation of transmission coefficient using tight-binding method. The real shape of applied potential on the bilayer graphene was included in the tight binding calculation. As obtained transmission coefficient is used to explore the current–voltage characteristics of the device in both on and off regimes. Electrical behavior of the device was obtained for different gate and drains voltages and channel length.

► Bilayer graphene MOSFET is investigated by calculation of transmission coefficient using tight-binding method.
► The real shape of applied potential on the bilayer graphene was included in the tight binding calculation.
► The effect of drain and gate biases on the on and off components of drain current was investigated separately.
► Current saturation, which is in agreement with the experimental results, was achieved in the calculation results.
► The effect of channel length scaling on the components of drain current was investigated.