کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786405 | 1023415 | 2013 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes](/preview/png/1786405.png)
چکیده انگلیسی
p-CuIn0.7Ga0.3(Se(1âx)Tex)2 type thin films were synthesized by thermal evaporation method on Mo coated glass substrates. To obtain Al/CuIn0.7Ga0.3(Se(1âx)Tex)2/Mo Schottky diode structure for two compositions of x = 0.0 and 0.6, Al metal was evaporated on upper surface of CuIn0.7Ga0.3(Se(1âx)Tex)2 as a front contact. Al/p-CuIn0.7Ga0.3(Se(1âx)Tex)2/Mo structures were annealed temperature range from 150 °C to 300 °C for 10 min under vacuum. The electrical and dielectrical properties of Al/p-CuIn0.7Ga0.3(Se(1âx)Tex)2 (CIGSeTe) Schottky barrier diodes (SBD) have been investigated. Capacitance-Voltage (C-V) characteristics, Conductance-Voltage (G/w-V) characteristics and interface state density were studied in order to obtain electrical and dielectrical parameters. The effects of interface state density (Nss), series resistance (Rs), the dielectric constant (Éâ²), dielectric loss (Éâ³), dielectric loss tangent (tan δ), ac electrical conductivity (Ïac) and carrier doping densities were calculated from the C-V and G/w-V measurements and plotted as a function of annealing temperature. It was observed that the values of carrier doping density NA for annealing temperature at 150 °C decreased from 2.83 Ã 10+15 cmâ3 to 2.87 Ã 10+14 cmâ3 with increasing Te content from x = 0.0 to 0.6. The series resistance for x = 0.0 found to be between 10 and 75 Ω and between 50 and 230 Ω for x = 0.6 in the range of annealing temperature at 150-300 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 13, Issue 6, August 2013, Pages 1112-1118
Journal: Current Applied Physics - Volume 13, Issue 6, August 2013, Pages 1112-1118
نویسندگان
S. Fiat, Ä°. Polat, E. Bacaksiz, M. Kompitsas, G. Ãankaya,