Design of control oxide thickness for multi-level storage in a stepped NFGM MOSCAP

► Al/HfO2/Au nc/SiO2/Si NFGM MOSCAP structure was studied. ► Multi-level storage through a stepped control oxide (HfO2) was attempted. ► Multi-level characteristics were confirmed by C-V measurement. ► Memory window and trap voltages were predicted by theoretical calculation. ► The major device parameters were consistent with the predicted values.