کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786631 | 1023420 | 2013 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Improvement in the negative bias stability of zinc oxide thin-film transistors by hafnium doping Improvement in the negative bias stability of zinc oxide thin-film transistors by hafnium doping](/preview/png/1786631.png)
Thin-film transistors (TFTs) with hafnium-doped zinc oxide (HZO) channels were fabricated and the effects of Hf content on the performance of ZnO-based TFT were investigated. HZO TFTs exhibit improved electrical characteristics, with increased ION/IOFF and decreased subthreshold swing. We also investigated the influence of hafnium doping on the bias stability of ZnO TFTs. HZO TFTs exhibited turn-on voltage (VON) shifts of −1 V in negative stress bias, compared with −8 V for intrinsic ZnO TFTs. The improvement in the VON shift may be due to a reduction in the total trap density resulting from the suppression of the defect-related oxidation state of the Zn ions caused by the high binding energy of Hf ions.
► Hf-doped ZnO (HZO) semiconductors were studied for improving NBTI.
► The addition of Hf slightly increases both ION/OFF and SS values.
► HZO-TFT devices was improved bias stability considerable compared to ZnO.
Journal: Current Applied Physics - Volume 13, Supplement 2, 20 July 2013, Pages S98–S102