کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786690 | 1023422 | 2013 | 5 صفحه PDF | دانلود رایگان |
Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (∼80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiOxCyNz film. The a-SiOxCyNz films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiOxCyNz film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR).
► a-SiOxCyNz barrier films synthesized at low temperature (<80 °C) by PECVD.
► The suitable energy affects the chemical structure and thin film properties.
► Advanced plasma process enables good barrier properties.
Journal: Current Applied Physics - Volume 13, Issue 5, July 2013, Pages 885–889