کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786783 | 1023425 | 2013 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Nanostructural analysis of ZnO:Al thin films for carrier-transport mechanisms Nanostructural analysis of ZnO:Al thin films for carrier-transport mechanisms](/preview/png/1786783.png)
The carrier mobility of sputter-deposited Al-doped ZnO transparent-conducting (ZnO:Al) thin films was controlled between 22 and 48 cm2/Vs by varying the ZnO:Al seed layer. The statistical distribution of the [001] grain misorientation was characterized from the X-ray diffraction rocking curve in the range from 0.043 (2.5°) to 0.179 rad (10.2°). The grain-boundary energy barriers (Eb) from Seto's model [1] clearly exhibit linear dependence on the grain-boundary misorientation angle (ω) according to the equation Eb = 78 ± 4 + 173 ± 32 ω meV.
► Carrier mobility of TCO is straightforwardly controlled by the seed-layer variation.
► The grain misorientation is in the range from 0.043 (2.5°) to 0.179 rad (10.2°).
► Transport energy barrier clearly exhibits linear dependence on the misorientation.
Journal: Current Applied Physics - Volume 13, Issue 4, June 2013, Pages 775–778