کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786846 | 1023426 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Continuous wave laser dopant activation of ion doped poly-Si films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ion doping effect on low temperature poly-Si films has been investigated to suggest CW laser dopant activation as an alternative to conventional thermal annealing. The poly-Si films were ion doped with various B2H6/H2 or PH3/H2 plasma ion doses at an acceleration voltage of 16 kV, a RF of 13.56 MHz, and a RF power of 20 W. Then, the dopant activation was carried out by laser scan or conventional thermal annealing. The properties of ion doped poly-Si were examined by sheet resistance measurement and Raman spectroscopy. The sheet resistance of the ion doped poly-Si after laser dopant activation is sufficiently low compared to the value measured after the thermal annealing. EBSD was also examined to clarify grain boundary condition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S226–S229
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S226–S229
نویسندگان
Ki Hyung Kim, Seong Jin Park, Eun Hyun Kim, Byeong Yeon Moon, Jin Jang,