کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786864 | 1023426 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
ZnO thin films have been prepared on Al2O3/Si by atomic layer deposition (ALD) at 150 oC process temperature. After deposition, post-growth annealing was carried out on the ZnO thin films under N2 ambient at different annealing temperatures. The Surface morphology and optical property of ZnO/Al2O3/Si were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL). The qualities of annealed samples are improved significantly compared with as-grown ZnO/Al2O3/Si. In particularly, it shows gradual improvement of optical property with increase of annealing temperature. The effect of Al2O3 buffer layer was also investigated comparing ZnO/Al2O3/Si and ZnO/Si annealed at high temperature (⩾800 oC).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S298–S301
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S298–S301
نویسندگان
C.R. Kim, J.Y. Lee, J.H. Heo, C.M. Shin, T.M. Lee, J.H. Park, H. Ryu, J.H. Chang, C.S. Son,