کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786864 | 1023426 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition](/preview/png/1786864.png)
چکیده انگلیسی
ZnO thin films have been prepared on Al2O3/Si by atomic layer deposition (ALD) at 150 oC process temperature. After deposition, post-growth annealing was carried out on the ZnO thin films under N2 ambient at different annealing temperatures. The Surface morphology and optical property of ZnO/Al2O3/Si were investigated by scanning electron microscopy (SEM), atomic force microscopy (AFM) and photoluminescence (PL). The qualities of annealed samples are improved significantly compared with as-grown ZnO/Al2O3/Si. In particularly, it shows gradual improvement of optical property with increase of annealing temperature. The effect of Al2O3 buffer layer was also investigated comparing ZnO/Al2O3/Si and ZnO/Si annealed at high temperature (⩾800 oC).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S298–S301
Journal: Current Applied Physics - Volume 10, Issue 2, Supplement, March 2010, Pages S298–S301
نویسندگان
C.R. Kim, J.Y. Lee, J.H. Heo, C.M. Shin, T.M. Lee, J.H. Park, H. Ryu, J.H. Chang, C.S. Son,