کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786894 1023427 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells
چکیده انگلیسی

Hydrogenated amorphous silicon–germanium (a-SixGe1−x:H) thin films were grown using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD, 27.13 MHz). The films were used in a silicon-based thin film solar cell. The films were grown from a gas mixture of silane (SiH4) and tunable germane (GeH4) gas that was diluted in hydrogen (H2). The results show that the optical band gap (Eg), optical adsorption coefficient (α), grain size and chemical composition depend on the germane contents of the films. The relationships among optical properties, structural properties, and chemical structural features were characterized by UV–visible spectroscopy (UV–vis), scanning electron microscopy (SEM), X-ray photoelectron spectrometer (XPS), and Raman spectroscopy. a-SixGe1−x:H solar cells with an efficiency of 5.59% were obtained the films.


► We present Hydrogenated amorphous silicon-germanium (a-SixGe1−x:H) thin films using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD, 27.13 MHz).
► A germane fraction of 11% was found to be optimal for the preparation of high-quality a-SixGe1−x:H films.
► We obtain the a-SixGe1-x:H solar cells with an efficiency of 5.59 %.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 1, Supplement, January 2011, Pages S50–S53
نویسندگان
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