کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1786936 1023427 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors
چکیده انگلیسی

We fabricated thin-film transistors (TFTs) with a Zr-doped zinc tin oxide (ZZTO) channel layer by the sol–gel process. To obtain optimal process conditions, ZZTO TFT was fabricated as a function of annealing temperatures. The performance of the ZZTO TFTs fabricated at annealing temperatures lower than 500 °C, was poor. This could be attributed to the insufficient energy available for M-OH dehydroxylation and condensation of multi-component oxides. The linear mobility, subthreshold gate swing (S.S), threshold voltage, and on-to-off current ratio of the ZZTO TFT annealed at 500 °C were 4.02 cm2 V−1 s−1, 0.94 V/decade, 3.13 V, and >106, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 1, Supplement, January 2011, Pages S258–S261
نویسندگان
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