کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1786966 | 1023428 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Thermal stress induced band gap variation of ZnO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The growth temperature and post annealing-dependent optical and structural effect of RF magnetron sputtered ZnO thin films were examined. As the growth temperature increased, the lattice constant increased and approached the bulk value, suggesting a decrease in interfacial strain between the substrate and thin film. For the post annealed samples, the interfacial strain decreased further and was close to the bulk value regardless of the post annealing environments (in air and O2). The optical properties of all ZnO thin films examined and revealed higher transparency (>90%). Furthermore, the optical band gap varied according to the growth temperature and post annealing environments due to a decrease in the interfacial strain effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 14, Issue 1, January 2014, Pages 30-33
Journal: Current Applied Physics - Volume 14, Issue 1, January 2014, Pages 30-33
نویسندگان
Y.-E. Jeong, S. Park,