Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structure

• Low Power RRAM using SiOx/a-Si/TiOy dielectric has low switching energy of <10 pJ.
• The 1D1R-like structure design can reach very uniform switching for LRS and HRS.
• The proposed RRAM owns fast 50 ns speed, tight current distribution and 106 cycles.
• Such good performance is attributed to the incorporation of diode-like Ni/SiOx/a-Si.

In this study, we report a resistive random access memory (RRAM) using trilayer SiOx/a-Si/TiOy film structure. The low switching energy of <10 pJ, highly uniform current distribution (<13% variation), fast 50-ns speed and stable cycling endurance for 106 cycles are simultaneously achieved in this RRAM device. Such good performance can be ascribed to the use of interface-engineered dielectric stack with 1D1R-like structure. The SiOx tunnel barrier in contact with top Ni electrode to form diode-like rectifying element not only lowers self-compliance switching currents, but also improves cycling endurance, which is favorable for the application of high-density 3D memory.