Investigation of a.c. conductivity measurements in a-Se80Te20 and a-Se80Te10M10 (M = Cd, in, Sb) alloys using correlated barrier hopping model

The a.c. conductivity of a-Se80Te20 and a-Se80Te10M10 (M = Cd, In, Sb) alloys has been investigated as a function of temperature in the range from 280 to 330 K and frequency in the range from 102 to 104 Hz. The experimental results indicate that a.c. conductivity σac is proportional to ωs where s < 1 and decreases with increasing temperature. The results obtained are discussed in terms of the correlated barrier hopping (CBH) model. An agreement between experimental and theoretical results suggests that the a.c. conductivity behavior of a-Se80Te20 and a-Se80Te10M10 (M = Cd, In, Sb) system can be successfully explained by CBH model. The contribution of single polaron and bipolaron hopping to a.c. conductivity in present alloys is also studied.

► We are reporting first time the effect of some additives on the thermally activated a.c. conduction in a-Se80Te20 alloy.
► The values of the density of charged defect states is found almost unaffected after the incorporation of Cd while it increases slightly in case of In and considerably in case of Sb in binary Se80Te20 alloy.
► The density of charged defect states in a-Se80Te10M10 system varies with the average electronegativity of ternary alloys.