کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787180 | 1023433 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of Young’s modulus of silicon versus temperature using a “beam deflection” method with a four-point bending fixture
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of Young’s modulus of silicon versus temperature using a “beam deflection” method with a four-point bending fixture Characterization of Young’s modulus of silicon versus temperature using a “beam deflection” method with a four-point bending fixture](/preview/png/1787180.png)
چکیده انگلیسی
Young’s modulus (E) and Poisson’s ratio (ν) are dependent upon the direction on the silicon surface. In this work, E and ν of silicon have been calculated analytically for any crystallographic direction of silicon by using compliance coefficients (s11, s12, and s44), and the values of E are confirmed experimentally by using a “beam deflection” method with a four-point bending fixture. Experimental results for E as a function of temperature from −150 °C to +150 °C are presented for (0 0 1) and (1 1 1) silicon wafers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 538–545
Journal: Current Applied Physics - Volume 9, Issue 2, March 2009, Pages 538–545
نویسندگان
Chun-Hyung Cho,