Low-temperature fabrication (<150 °C) of amorphous IGZO TFTs via high density CVD and superimposed rf/dc magnetron sputtering

This paper presents a low temperature fabrication of amorphous IGZO TFTs (a-IGZO TFTs) via high density CVD and superimposed rf/dc magnetron sputtering below 150 °C Low temperature processed SiOx films were been prepared in high density plasma chemical vapor deposition with inductively-coupled plasma (ICP) source and their electrical properties of these films have been investigated as a function of an ICP power and an O2 flow rate. Also, we found that a-IGZO semiconductor could be affected by a dc self-bias of a target surface using a superimposed rf/dc magnetron sputtering. Increasing a dc self-bias, higher post-annealing temperature is needed to achieve their electrical characteristics of a-IGZO TFTs. For a low-temperature and high performance a-IGZO TFTs, therefore, it is necessarily considered that a-IGZO semiconductors could be damaged due to accelerated negative oxygen ions during conventional magnetron sputtering.