کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787287 | 1023436 | 2014 | 4 صفحه PDF | دانلود رایگان |
• The electronic structure of strained graphene.
• Band gap engineering of strained graphene.
• Advantages of tight binding schemes in graphene electronic structure.
• Isotropic versus uniaxial strained graphene.
The effective mass of strained graphene is investigated by tight-binding and density-functional theory calculations. For graphene strained in the zigzag direction, we find a strong anisotropy in the effective mass near the gap opening, with an abrupt increase of the effective mass at the critical strain in one direction and a smooth variation perpendicular to it. There is no band-gap opening for isotropic strain, but at an expansive strain of about 28%, the lower edge of the s-band reaches the Fermi level and makes the graphene metallic.
Journal: Current Applied Physics - Volume 14, Supplement 1, 14 March 2014, Pages S136–S139