Potential effect on the properties of CuInSe2 thin films deposited using two-electrode system

► The CIS films have been grown on ITO substrate by electrodeposition technique. ► The film deposited at −4 V presents the CIS under its sphalerite structure. ► The films deposited at −6, −7 and −8 V show the CIS in its chalcopyrite structure. ► The structure of these films is predominantly (112) oriented.