کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787574 1023446 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Carrier transport properties in high resistivity polycrystalline CdZnTe material
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Carrier transport properties in high resistivity polycrystalline CdZnTe material
چکیده انگلیسی

The electrical properties of polycrystalline CdZnTe (Zn = 4%) having high resistivity (3.3 × 109 Ω cm) were investigated by using the time-of-flight technique. We have found that the average drift mobility of as-deposited polycrystalline CdZnTe samples is 1.21 cm2/V s and the electron trapping time is 4.6 μs. In a comparison of annealed samples at different conditions, the variation of resistivity in polycrystalline CdZnTe is considered to be mainly related to the fluctuation of carrier concentration, which originates from the change of density in deep level.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 7, Issue 3, March 2007, Pages 296–299
نویسندگان
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