New application for the BiVO4 photoanode: A photoelectroanalytical sensor for nitrite

• A new photoelectrochemical sensor based in BiVO4 semiconductor was developed.
• BiVO4/FTO was applied in photoelectrochemical analysis of nitrite ions.
• Nitrite ions act as the hole scavenger reducing the recombination process.
• BiVO4/FTO exhibited good analytical performance in nitrite analysis.

A simple and sensitive photoelectrochemical sensor based on the bismuth vanadate (BiVO4) photoanode coupled to visible light excitation was developed for nitrite detection. The BiVO4 was prepared by hydrothermal methods and used as photoelectroactive sensor. Photoexcitation with visible light allows nitrite anions to act as highly efficient hole scavenger at low potential. The photocurrent response increases linearly with nitrite concentration in the solution. The proposed device operates in the range of detection (2.5 to 100.0 μmol L–1), with limit of detection (1.5 μmol L–1), and with good reproducibility (4.1%) for nitrite analysis.