کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787710 | 1023450 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Non-polar a-plane GaN layers were grown on planar and hemispherical micro- and nano-patterned r-sapphire substrates (PSS) by metal organic chemical vapor deposition (MOCVD). Double Crystal X-ray Rocking Curve (DCXRC) and Transmission Electron Microscopy (TEM) analyses showed that the crystal quality of a-GaN grown on the micro-PSS was the best among three kinds of r-sapphire substrates, which was attributed to defect reduction through lateral overgrowth on the hemispherical patterns. The intensity of the near band-edge emission (NBE) at 3.4eV from a-GaN on the micro-PSS was increased by about 30 times compared with that of the conventional a-plane GaN on planar r-sapphire, while the yellow emission spectrum at 2.2eV was the lowest among the three samples. Comparison of the micro-photoluminescence mapping image and the cross-section TEM also showed high and low defect regions on the planar section and hemisphere, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 4, Supplement, July 2011, Pages S90-S94
Journal: Current Applied Physics - Volume 11, Issue 4, Supplement, July 2011, Pages S90-S94
نویسندگان
Geunho Yoo, Hyunsung Park, Donghun Lee, Hyoungjin Lim, Seunga Lee, Bohyun Kong, Hyungkoun Cho, Hyoungwon Park, Heon Lee, Okhyun Nam,