کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787726 | 1023450 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hybrid gate insulator for OTFT using dip-coating method
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With metal alkoxide(Ti, Ta, Zr) and copolymer, hybrid insulator film between 10 nm and 100 nm was prepared by dip-coating method on Si substrate and showed better frequency performance in terms of dielectric characteristics than did the copolymer. Also, the dielectric constant of hybrid dielectrics became larger as the content of metal alkoxide increased. With very thin hybrid dielectrics, OTFT with pentacene as organic semi-conductor can be operated below 10 V. From the transfer characteristics, the mobility of OTFT performance and sub-threshold were 3.5 cm2/V, 0.09 V/dec, respectively, and on/off current ratio was ∼2.9 × 107. Dipping process to make thin hybrid gate insulator has been confirmed to be easy and versatile.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 4, Supplement, July 2011, Pages S154–S157
Journal: Current Applied Physics - Volume 11, Issue 4, Supplement, July 2011, Pages S154–S157
نویسندگان
Jina Hwang, Jinho Lee, Yeonok Kim, Eunju Lee, Yuedan Wang, Hongdoo Kim,