Effect of water treatment on transparent semiconductor InZnSnO thin films

The effects of water exposure on InZnSnO transparent thin films are reported. After the immersion of InZnSnO films under de-ionized water, an enrichment of In (and Sn) and a reduction of Zn are found on the surface, probed with X-ray photoelectron spectroscopy (XPS). In addition, O 1s core-level XPS spectra show a presence of hydroxyl after the water immersion process, supporting that the adsorption of H2O to InZnSnO surface may induces partial negative charge to surface with either molecular to hydroxyl forms.

Research highlights
► The X-ray photoelectron spectroscopy measurement of InZnSnO thin-film.
► The enrichment of Zn and the reduction of In and Sn after exposure to water.
► The chemical states of surface oxygen of InZnSnO thin-films show presence of hydroxyl.