کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787793 | 1023452 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Surface analysis of GeC prepared by reactive pulsed laser deposition technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Amorphous germanium carbide (a-Ge1âxCx) thin films were prepared by reactive pulsed laser deposition technique using several methane pressures. Surface analysis was performed by X-ray photoelectron spectroscopy (XPS) to examine the composition and elemental bonding at the surface of the material. Optical analysis was carried out by spectroscopic ellipsometry to study the optical constants (n and k) and other parameters of the film. Results indicate that the carbon atoms to be incorporated in the germanium lattice, forming a-Ge1âxCx alloy, for concentrations below about 10 atomic % where the Ge atoms are uniformly distributed. There is formation of graphitic agglomerates for higher carbon concentrations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 3, May 2011, Pages 547-550
Journal: Current Applied Physics - Volume 11, Issue 3, May 2011, Pages 547-550
نویسندگان
Arshad Mahmood, A. Shah, F.F. Castillon, L. Cota Araiza, J. Heiras, M. Yasin Akhtar Raja, M. Khizar,