کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1787793 1023452 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface analysis of GeC prepared by reactive pulsed laser deposition technique
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Surface analysis of GeC prepared by reactive pulsed laser deposition technique
چکیده انگلیسی
Amorphous germanium carbide (a-Ge1−xCx) thin films were prepared by reactive pulsed laser deposition technique using several methane pressures. Surface analysis was performed by X-ray photoelectron spectroscopy (XPS) to examine the composition and elemental bonding at the surface of the material. Optical analysis was carried out by spectroscopic ellipsometry to study the optical constants (n and k) and other parameters of the film. Results indicate that the carbon atoms to be incorporated in the germanium lattice, forming a-Ge1−xCx alloy, for concentrations below about 10 atomic % where the Ge atoms are uniformly distributed. There is formation of graphitic agglomerates for higher carbon concentrations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 11, Issue 3, May 2011, Pages 547-550
نویسندگان
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