Utilization of electron beam to modulate electron injection over Schottky barrier

Modulation of electron injection over Schottky barrier was realized by employing electron beam irradiation on the metal/ZnO-nanowire contact. The structure revealed a good response to the illumination at a scanning frequency of 0.1 Hz, which can be enhanced by increasing bias and decreased with the increase of electron beam energy. These phenomena can be attributed to the Schottky barrier formed at the metal/ZnO-nanowire interface which limits the electron transport across the contact. The electron beam irradiation gives rise to high efficiency of electron injection over the barrier, while the interplay between charge discreteness, coherent scattering, and Coulomb interaction may reduce the conductivity.

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► The current response increased with the increase of bias voltages owing to the raised efficiency of electron injection at the W/ZnO NW contacts under electron beam illumination,
► The current response reduced as the electron energy increased, as a result of interplay between charge discreteness, coherent scattering, and Coulomb interaction,
► Experimental results revealed that Schottky barrier formed at W/ZnO NW interface worked as a gate limiting electrons crossing the interface but the electron beam illumination could enhance the electron injection rate resulting in an increased current response.