W-band resistive mixer using metamorphic HEMT

We fabricate single-ended resistive W-band millimeter-wave monolithic IC (MIMIC) mixers based on 0.1 μm InGaAs/InAlAs/GaAs metamorphic HEMT technology. The mixers show good characteristics in linearity and LO-RF isolation, and the mixers with IF amplifiers exhibit a conversion loss of ∼0.4 dB, which is an improvement of ∼7.8 dB compared to that of the mixers without IF amplifiers. We obtain P-1 dB of 10 and 9 dBm from the mixers with and without the IF amplifiers, respectively.