کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1787908 | 1023454 | 2012 | 5 صفحه PDF | دانلود رایگان |
The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted semiconductor surface potential and low subthreshold swing S = 34 (<60 mV/dec) can be realized with appropriate thicknesses of ferroelectric thin film and insulator layer at room temperature. What's more, a reduction gate voltage about 260 mV can be reached if the ON-state current is fixed to 600 μA/μm. It is expected that the derived results can offer useful guidelines for the application of low power dissipation in ongoing scaling of FETs.
► The surface potential and drain current of field-effect transistor were investigated.
► The ferroelectric negative capacitance was considered in this investigation.
► A low subthreshold swing S = 34 (<60 mV/dec) can be realized with appropriate tf and ti.
► A reduction gate voltage about 260 mV can be reached if ION is fixed at 600 μA/μm.
Journal: Current Applied Physics - Volume 12, Issue 6, November 2012, Pages 1591–1595