Properties of the Cu(In,Ga)Se2 absorbers deposited by electron-beam evaporation method for solar cells

Cu(In,Ga)Se2 thin films were formed using the commercial Cu(In,Ga)Se2 bulk by electron-beam evaporation method with the various beam current of the irradiated electrons. The experimental results showed that the Cu-rich Cu(In1−xGax)Se2 films could be deposited successfully when the electron-beam current increased up to 90 mA. After the annealing process at 550°C for 1 h in the vacuum of 3 × 10−6 torr, the as-deposited amorphous Cu(In,Ga)Se2 thin film was crystallized and the Cu-rich CIGS film was converted to Cu-poor film. The chemical composition the morphology and the band gap of the annealed Cu(In,Ga)Se2 films were also analyzed.