Neutron irradiation effect of poly-Si1−xMnx semiconductors grown by MBE

The neutron irradiation effect of polycrystalline Si1−xMnx semiconductor thin films has been studied. The Si1−xMnx semiconductor thin films were grown on SiO2/(1 0 0)Si substrate at 400 °C by using a MBE. The as-grown specimens are irradiated by the fast neutrons of 0.82 MeV in a neutron research reactor at KAERI. After neutron irradiation, the electrical resistivities of neutron-irradiated specimens increase with the irradiation amount, while the saturation magnetizations decrease. Hall analysis reveals that the mobility of neutron-irradiated specimen decreases remarkably. The XRD and TEM analyses show that the phase transformation is not induced by the neutron irradiation.