کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1788107 1023459 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Ferroelectric switching behavior of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films
چکیده انگلیسی

The effect of pulse amplitude on the ferroelectric and switching properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films has been studied. The structural and morphological analysis revealed that the films had a well crystallized perovskite phase and grain size of about 30–40 nm. A well saturated P–E hysteresis loop was observed with a remnant polarization (Pr) ≈ 4.8 μC/cm2 and a coercive field ≈ 100 kV/cm at a frequency of 1 kHz. The Pr has been found to be decreased only 4.3% after passing 8.0 × 108 cycles. The analysis of switching response with nucleation limited switching model reveals that characteristic switching time (t0) variance is due to the random distribution of the local electric fields. The peak value of polarization current and t0 exhibits exponential dependence on reciprocal of pulse amplitude.


► The effect of pulse amplitude on ferroelectric properties was studied.
► Crystallized pure perovskite phase.
► The stability of Pr has found to be improved.
► Switching response has been analyzed with nucleation limited switching (NLS) model.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 12, Issue 4, July 2012, Pages 1144–1147
نویسندگان
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