کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788155 | 1023462 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of the contact resistance in copper phthalocyanine thin film transistor with UV/ozone treated Au electrodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Bottom-contact (BC) copper phthalocyanine (CuPc) thin film transistor with UV/ozone treated Au as a source/drain electrode was fabricated and the contact resistance was estimated from the transmission line method (TLM). Comparing the properties of OTFT with untreated Au electrode, the performance of the BC CuPc-TFT with the UV/ozone treated Au electrodes was significantly improved: saturation mobility increased from 4.69Â ÃÂ 10â3 to 2.37Â ÃÂ 10â2Â cm2/VÂ s, threshold voltage reduced from â29.1 to â6.4Â V, and threshold swing varied from 5.08 to 2.25Â V/decade. The contact resistance of the device with UV/ozone treated Au electrodes was nearly 20 times smaller than that of the device with untreated Au electrodes at the gate voltage of â20Â V. This result indicated that using the UV/ozone treated Au electrode is an effective method to reduce the contact resistance. The present BC configuration with UV/ozone treated Au electrodes could be a significant step towards the commercialization of OTFT technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 5, September 2010, Pages 1302-1305
Journal: Current Applied Physics - Volume 10, Issue 5, September 2010, Pages 1302-1305
نویسندگان
Jun Li, Liang Zhang, Xiao-Wen Zhang, Hao Zhang, Xue-Yin Jiang, Dong-bin Yu, Wen-Qing Zhu, Zhi-Lin Zhang,