کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1788162 1023462 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy
چکیده انگلیسی

abstractThe chemical states of Bi (6 at.%)-doped GeTe thin film (GBT) in structural phase transition were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). Clean amorphous GBT was phase changed to the NaCl-type crystalline structure by in-situ annealing under ultrahigh vacuum, during which transition, the binding energy and shape of the Te 4d core-level showed no changes, the Ge 3d core-level showed a spin-orbit split-enhanced feature with negligible chemical shift, and the Bi 4f core-level became narrower and shifted towards the higher binding energy side by 0.25 eV. We suggest that as the film phase changed to the meta-stable crystalline structure, the Ge and Bi atoms moved to more constrained sites in the electron configuration.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 5, September 2010, Pages 1336–1339
نویسندگان
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