Patterning of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film for nonvolatile memory devices

► For nonvolatile memory, ferroelectric film as storage medium need to be patterned, which is important for device isolation and parasitic capacitance reduction. ► So far, it is hard to pattern polymer film because solvents used in photolithography steps affect to the deposited polymer film. ► In this paper, by changing a solubility of photoresist stripper, it was possible to remove photoresist on ferroelectric polymer film. ► The solubility was controlled by mixing of strong solvent as acetone and insoluble liquid as water. ► Finally, chemical and thermal damage are not found in polarization and voltage relationship, which means the photolithography method is established well.