کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788472 | 1524162 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Self-assembled germanium nanostructures formed using electron-beam annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Self-assembled germanium nanostructures formed using electron-beam annealing Self-assembled germanium nanostructures formed using electron-beam annealing](/preview/png/1788472.png)
چکیده انگلیسی
Germanium nanostructures have been fabricated on silicon substrates using ion-beam sputtering growth followed by an ex-situ annealing step. The substrates are not heated during growth, resulting in a post-growth deposited layer â¼225 nm thick with a surface which has no evidence of nanostructure formation. Following annealing at temperatures of 400-700 °C dramatic nanostructuring is observed at the surface. For temperatures below 600 °C atomic force microscopy analysis reveals dense arrays of nanostructures with heights typically around 5-30 nm. Increased feature size and surface roughening is observed for samples annealed above 600 °C, with a broadened size distribution centred at 450 nm. This is assigned to intermixing at the Si/Ge interface, which reduces the stress in the layer, allowing larger features to form.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 276-279
Journal: Current Applied Physics - Volume 8, Issues 3â4, May 2008, Pages 276-279
نویسندگان
D.A. Carder, A. Markwitz, H. Baumann, J. Kennedy,