Preparation, characterization and formation mechanism of gallium oxide nanowires

Ga2O3 nanowires were fabricated via vapor–solid process in ambient atmosphere using Ga and Ga2O3 as starting materials without adding catalyst. The Ga2O3 nanowires were found to be about 10–80 nm in diameter and several micrometers long. The formation mechanism of the nanowires was analyzed by differential scanning calorimeter and thermogravimetric analysis and found to be controlled by the vapor–solid (VS) growth mechanism. This synthetic method is simple and low cost, and could be extended to synthesize ZnO and In2O3 nanowires.