کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1788614 | 1023475 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of the critical indium composition corresponding to the metal-insulator transition in InxGa1âxN (0.06 ⩽ x ⩽ 0.135) layers
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The low-temperature conductivity of InxGa1âxN alloys (0.06 ⩽ x ⩽ 0.135) is analyzed as a function of indium composition (x). Although our InxGa1âxN alloys were on the metallic side of the metal-insulator transition, neither the Kubo-Greenwood nor Born approach were able to describe the transport properties of the InxGa1âxN alloys. In addition, all of the InxGa1âxN alloys took place below the Ioeffe-Regel regime with their low conductivities. The observed behavior is discussed in the framework of the scaling theory. With decreasing indium composition, a decrease in thermal activation energy is observed. For the metal-insulator transition, the critical indium composition is obtained as xc = 0.0543 for InxGa1âxN alloys.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 10, Issue 3, May 2010, Pages 838-841
Journal: Current Applied Physics - Volume 10, Issue 3, May 2010, Pages 838-841
نویسندگان
A. Yildiz, S.B. Lisesivdin, P. Tasli, E. Ozbay, M. Kasap,